Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9830324 | Journal of Crystal Growth | 2005 | 8 Pages |
Abstract
The growth of B12As2 by chemical vapor deposition on 6H-SiC substrates using hydrides B2H6 and AsH3 as the reactants is described. The growth rate increased from 1.5 μm/h at 1100 °C to a maximum of 5 μm/h at 1400 °C, and decreased at higher temperatures. X-ray diffraction indicates that the deposits were amorphous when the deposition temperature was below 1150 °C. Strongly c-axis oriented crystalline B12As2 films were obtained at temperatures higher than 1150 °C. The orientation relationship of the B12As2 on 6H-SiC was (0001)ã101¯0ã||(0001)ã112¯0ã. The surface morphology of the B12As2 film grown at 1150 °C consisted of isolated triangular crystallites. A continuous film forms as the growth temperature is progressively increased up to 1450 °C.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
R. Nagarajan, Z. Xu, J.H. Edgar, F. Baig, J. Chaudhuri, Z. Rek, E.A. Payzant, H.M. Meyer, J. Pomeroy, M. Kuball,