Synthesis of MgxNi1−xO thin films with a band-gap in the solar-blind region

MgxNi1−xO thin films with a band-gap of 4.98 eV were successfully prepared on quartz substrates by sol-gel method. XPS, XRD measurement results showed that MgxNi1−xO films with cubic NiO structure were formed at 1000 °C. UV-visible absorption results showed that the absorption edges of the films varied as the amount of Mg2+ changed. The film with x=0.3 showed a band-gap of 4.98 eV, which implies possible application for solar-blind UV detection.