| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9830332 | Journal of Crystal Growth | 2005 | 5 Pages |
Abstract
Nanoporous PLZT ferroelectric thin film was grown via a novel 'one-step' CSD process on Pt/Ti/SiO2/Si(1Â 0Â 0) substrate. For comparison, dense PLZT thin film was also prepared via a conventional 'two-step' CSD process on the same substrate. The microstructure and electrical properties of both thin films were investigated and compared. Due to different nucleation manners, the nanoporous and conventional films demonstrated random and (1Â 0Â 0) orientation, respectively. The nanoporous PLZT had higher remnant polarization than the conventional PLZT thin film because of their different domain structure, and simultaneously held very little dielectric constant because of its high porosity.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Ziping Cao, AiLi Ding, Xiyun He, Wenxiu Cheng, Pingsun Qiu,