| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9830333 | Journal of Crystal Growth | 2005 | 6 Pages |
Abstract
Thickness effect of immiscible alloy InAlAs as matrix layer on the morphology of InAs nanostructure grown on InAlAs/InP (0Â 0Â 1) by solid-source molecular-beam epitaxy has been studied. Experiments demonstrate that InAs nanostructure grown on thin InAlAs matrix layer forms randomly distributed quantum dot, whereas, grown on thick InAlAs matrix layer forms one-dimension ordered mixture of quantum wire and quantum dot. This drastic modification in the nanostructure morphology is attributed to the generation of composition modulation in the immiscible InAlAs alloy with the increase of the layer thickness.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
F.A. Zhao, Y.H. Chen, X.L. Ye, B. Xu, P. Jin, J. Wu, Z.G. Wang, C.L. Zhang,