Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9834614 | Journal of Magnetism and Magnetic Materials | 2005 | 4 Pages |
Abstract
Magnetic tunnel transistors were prepared with different Schottky junctions: Pt/n-Si, Au/n-Si and NiFe/n-Si. The magneto-current as well as the collector current was found to depend strongly on the Schottky junction used. The largest collector current was obtained in the NiFe/n-Si junction, which was ten times larger than that of the Au/n-Si junction. The collector current of the Pt/n-Si junction was about one half of that of the Au/n-Si junction. However, in the Pt/n-Si junction that a magneto-current as high as 620%, followed by 530% in the Au/n-Si junction and 200% in the NiFe/n-Si junction.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
T. Hirose, Y. Fujiwara, M. Jimbo, T. Kobayashi, S. Shiomi,