| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9834622 | Journal of Magnetism and Magnetic Materials | 2005 | 4 Pages |
Abstract
An amorphous metallic FeZr layer is inserted inside the bottom magnetic layer in exchange-biased CoFe/Al2O3/CoFe magnetic tunnel junctions (MTJs). At room temperature, the tunneling magnetoresistance (TMR) increases from 25% to 36% before annealing, and from 45% to 52% after annealing. The junction resistance also increases with the FeZr thickness. The higher quality of the MTJ is attributed to the improved Al-oxide barrier due to the amorphousness of the FeZr layer.
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Condensed Matter Physics
Authors
Kyung-In Jun, J.H. Lee, K.-H. Shin, K. Rhie, B.C. Lee,