Hydrostatic stress dependence of the exciton-phonon coupled states in cylindrical quantum dots

We investigate theoretically the effects of compressive stress on the binding energy of an exciton in a cylindrical quantum dot (QD) using a variational procedure within the effective mass approximation. The stress was applied in the z direction and the interaction between the charge carriers (electron and hole) and confined longitudinal optical (LO) phonon modes was taken into account. Specific applications of these results are given for GaAs QDs embedded in a Ga1-xAlxAs semiconductor. The result shows that the binding energy and the polaronic correction increases linearly with increasing stress. Moreover, we obtain the binding energy and the polaronic contribution in the limit in which the QD turns into a quantum well.