Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9837404 | Physica B: Condensed Matter | 2005 | 6 Pages |
Abstract
Amorphous gallium arsenide (a-GaAs) films were prepared from their constituents using the co-evaporation technique. The temperature dependence of DC conductivity for the as-deposited (fresh) As-rich and that of thermally annealed films over the temperature range 373-553Â K is measured. Results of the characteristic electrical parameters indicate non-monotonic behavior during the thermal annealing range 373-423Â K and a monotonic one in the range 423-553Â K. Results of the density of structural defect states, using the space-charge-limited current model, are given and discussed in relation to the nature and distribution of defect states regarding their dependence on the thermal treatment.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
F.A. Abdel-Wahab, M.F. Kotkata,