Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9837437 | Physica B: Condensed Matter | 2005 | 7 Pages |
Abstract
The surface structure of Si(1 1 1)-7Ã7 after exposure to a large dose of Ar at room temperature has been investigated by scanning tunneling microscopy and the adsorbates on the surface have been analyzed. It was found that Ar does not adsorb on the Si(1 1 1)-7Ã7 surface. The adsorption is dominated by the impurities, most likely to be H2O, in the Ar gas. The impurities dissociatively adsorb on the Si(1 1 1)-7Ã7 surface and appear as dark spots in both empty and filled state images due to the diminution of Fermi-level local density of states over the adsorption sites. The chemisorption is site selective and the ratio of reacted center sites vs. reacted corner sites is about 2:1, indicating that center-adatoms react with H2O twice as fast as corner-adatoms. After annealing the substrate to 660 °C, this ratio keeps invariant while the total number of dark sites is significantly decreased. The remaining dark spots on the Si(1 1 1)-7Ã7 surface after annealing at 660 °C are likely to be surface vacancies caused by the desorption of SiO.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H. Wang, Z.Q. Zou, Q. Liang, Q.K. Wang,