Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9837468 | Physica B: Condensed Matter | 2005 | 5 Pages |
Abstract
The electronic structure and the ferromagnetism of V- and Cr-doped zinc-blende semiconductor CdTe have been investigated by spin-polarized calculations with first-principles plane-wave pseudopotential method within the generalized gradient approximation for the exchange-correlation potential. We find that the V- and Cr-doped zinc-blende CdTe show half-metallic behavior with a total magnetic moment of 3.0 and 4.0μB per supercell, respectively. It may be useful in semiconductor spintronics and other applications.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
K.L. Yao, G.Y. Gao, Z.L. Liu, L. Zhu, Y.L. Li,