Improved algorithm for Monte Carlo studies of electron transport in degenerate semiconductors

Computational algorithms that were proposed to include Pauli exclusion principle into Monte Carlo simulations provide some unphysical results like higher than one occupation numbers for electrons. Modified algorithm proposed few years ago allows overcoming these problems, but may be difficult to implement into existing Monte Carlo programs. In this paper we describe a new method that is free of those inconveniences. The new algorithm is demonstrated on the example of electrons in highly doped GaAs at low field limit. Our test calculations indicate very small deviations from theoretical Fermi-Dirac distribution, even in the case of small number of simulated electrons where large deviations are obtained by other methods.