Characterization of CdSexTe1−x sintered films for photovoltaic applications

Polycrystalline thin films of CdSexTe1−x ternary system with variable compositions have been deposited onto highly cleaned glass substrates by sintering process. The optical, structural and electrical properties of CdSexTe1−x sintered thin films have been examined. The optical band gap and optical constants of these films have been determined by using reflection spectra of these films recorded by spectrophotometer (model U-3400) in a wavelength range of 700-880 nm. The crystal structure and composition of CdSexTe1−x ternary system have been determined by X-ray diffraction patterns applying Vigard's law using a Philips X-ray diffractometer with CuKα radiation. The Schottky junction of CdSe0.4Te0.6 with silver (Ag) has been made and barrier height has been determined using current-voltage characteristics.