Spin-selected resonant tunneling through a magnetic-controlled diode

The spin resonant tunneling through a semiconductor double-barrier structure are investigated by solving static Schrödinger equations. In the case of symmetric double barriers, both spin-up and spin-down electrons show resonant tunneling, but the peaks appear at different magnetic field. This can be used to realize magnetic-controlled spin filter. We perform calculation of conductance and conclude that the conductance decreases by increasing the temperature. The results may shed light on the possibility of designing resonant-tunneling devices and spin selecting systems.