Surface and bulk structural changes in InP single crystals induced by 350Â Mev Au ion irradiation

InP (0 0 1) wafers were irradiated at room temperature and at liquid nitrogen temperature with swift Au ions. The bulk and near surface structure was investigated by means of X-ray grazing incidence diffraction and measurements at the (0 0 2) Bragg reflection. While irradiation at room temperature with 350 MeV Au ions induced amorphization at a fluence of Φt=1×1013Au/cm2, cooling to liquid nitrogen temperature during irradiation reduces the defect generation. A threshold value for complete bulk amorphization of Φt=6×1012Au/cm2 was observed. The near surface lattice structure is less affected by the irradiation than the bulk.