Continuous fabrication of self-epitaxial PLD-CeO2 cap layer on IBAD tape for YBCO coated conductors

We have studied high grain alignment and rapid fabrication by using a self-epitaxial PLD-CeO2 cap layer for buffered substrate tapes. At the same time, we have applied the self-epitaxial PLD-CeO2 cap layer to continuous fabrication process by a reel-to-reel system. As the results, we found that deposition temperature of 500 °C in PLD-CeO2 cap layer was the best in terms of self-epitaxy and CeO2's target with the density of 75% higher was able to uses for application. Based on these results, we developed the self-epitaxial PLD-CeO2 cap layer process at the tape transfer speed of 5-6 m/h by the reel-to-reel system for 100 m class long IBAD-GZO tapes with Δϕ values of 14-15° fabricated at 1 m/h. The CeO2 cap layer with the Δϕ values of 4-5° was obtained throughout the whole length. For an industrial scale production, the PLD-CeO2 cap layer was fabricated at 2.5 m/h on a 55 m long IBAD-GZO tape fabricated at 2 m/h. This means that the overall buffer layer process was fabricated above 2 m/h. In this case, the Δϕ values were in the range of 9-10°.