Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9841585 | Physica C: Superconductivity and its Applications | 2005 | 7 Pages |
Abstract
Y2O3 film was directly deposited on Ni-3at%W substrate by DC reactive sputtering. DC reactive sputtering was carried out using metallic Y target and water vapor for oxidizing the elements of metallic target on the substrate. The detailed conditions of DC reactive sputtering for depositions of Y2O3 films were investigated. The window of water vapor for proper growth of Y2O3 films was determined by sufficient oxidations of the Y2O3 films and the non-oxidation of the target surface, which was required for high rate sputtering. The window turned out to be fairly wide in the chamber used. As the sputtering power was raised, the deposition rate increased without narrowing the window. The fabricated Y2O3 films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the Y2O3 buffered Ni-3at%W substrate showed Tc, Ic (77Â K, self field), and Jc (77Â K, self field) of 89Â K, 64Â A/cm and 1.1Â MA/cm2, respectively.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Ho-Sup Kim, Chan Park, Rock-Kil Ko, Dongqui Shi, Jun-Ki Chung, Hong-Soo Ha, Yu-Mi Park, Kyu-Jeong Song, Do-Jun Youm,