Epitaxial NiO buffer layer by chemical enhanced surface oxidation epitaxy on Ni-5%W RABiTS for YBCO coated conductors

We found a chemical pretreatment which makes it possible to grow (0 0 1)-oriented, biaxially textured NiO buffer layers on Ni with high (5%) W content at temperatures ranging from 320 °C to 1300 °C and at ambient air. In this paper we report the influence of the chemical pretreatment, the oxidation time and the oxidation temperature on the properties of self oxidized NiO layers as well as the influence of the oxidation process on the substrate properties. By the deposition of a subsequent La0.7Ca0.3MnO3 (LCMO) buffer layer, YBCO was grown epitaxially on Ni-5%W-RABiTS with first results showing a critical current density Jc of 1 × 105 A/cm2 and a critical temperature Tc of 89 K.