| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 9841956 | Physica C: Superconductivity and its Applications | 2005 | 4 Pages | 
Abstract
												Effect of photodoping on cuprate superconductors is investigated. A two-component model with pair transfer in doping-driven electron spectrum is used. The transition temperature photoinduced shift depends on the hole doping level and the nature of the photoelectrons localization. If it is out of the CuO2 planes one expects Tc photostimulation on the side of underdoping (Y-123). Passing Tcm the shift becomes negative. Partly localization of photoelectrons out of the planes quenches the positive effect on the underdoped side whereas photodepression on the other side appears (Tl-2201, Bi-2212?). Photoelectrons remaining in the defect subsystem of the planes enhance Tc before the optimal doping.
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											Authors
												N. Kristoffel, P. Rubin, 
											