| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9845030 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2005 | 5 Pages |
Abstract
Thin epitaxial layers grown on Cz substrates (Epi) and high resistivity Cz diodes have been irradiated with fluences of 2Ã1014Â cmâ2 24Â GeV protons. It is shown that the differences in the changes observed in the effective doping concentration (Neff) after irradiation of Epi silicon can be explained by the balance between the formation of two type of defects-a deep acceptor (the I center) and a shallow donor (the BD complex). The BD concentration in Epi material is evaluated to be â¼1.3Ã1012Â cmâ3.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
I. Pintilie, M. Buda, E. Fretwurst, F. Hönniger, G. Lindström, J. Stahl,