Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9845033 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2005 | 6 Pages |
Abstract
High-resolution photoinduced transient spectroscopy (HRPITS) has been used to investigate defect centres in n-type epitaxial silicon after 24Â GeV/c proton irradiation with fluences of 3Ã1014 and 9Ã1014 cmâ2 followed by a long-term annealing at 80 oC. The measurements revealed nine traps with activation energies ranging from 5 to 460Â meV. In the material irradiated with the lower fluence the concentration of V2Oâ/0 complexes is found to be approximately 4 times lower than that of divacancies V2â/0. After the irradiation with the higher fluence the material defect structure is different and the concentration of V2Oâ/0 complexes is around 6 times higher compared to that of divacancies V2â/0.
Related Topics
Physical Sciences and Engineering
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Instrumentation
Authors
R. KozÅowski, P. KamiÅski, E. Nossarzewska-OrÅowska, E. Fretwurst, G. Lindstroem, M. PawÅowski,