Elimination and formation of electrically active defects in hydrogenated silicon particle detectors irradiated with electrons

The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been studied in detector structures made of standard float zone silicon. The detectors were irradiated with 3.5 MeV electrons and annealed at temperatures of 50-350 °C. It has been found that preliminary hydrogenation at 300 °C leads to disappearance of divacancies and vacancy-oxygen complexes at lower annealing temperatures. The annealing of hydrogenated and irradiated crystals is accompanied by hydrogen redistribution and formation of hydrogen-related donors.