| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9845036 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2005 | 5 Pages |
Abstract
Preliminary radiation tests of hydrogenated amorphous silicon n-i-p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24Â GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
M. Despeisse, P. Jarron, K.M. Johansen, D. Moraes, A. Shah, N. Wyrsch,