| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9845040 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2005 | 6 Pages |
Abstract
A novel p+-n+/n/n+ semi-3D structure configuration has been developed and it is expected to improve the radiation hardness of silicon sensors after space charge sign inversion (SCSI). A special configuration of semi-3D sensors facilitates depletion from both sides of the sensors after SCSI and reduces the depletion voltage by half or more. The reduction of depletion voltage will increase the ability of silicon detectors to operate in the presence of severe bulk radiation damage expected at high-intensity colliders. Semi-3D sensors can be manufactured using only single-sided, conventional planar processing. Electrical characterization of semi-3D test structures through I-V and C-V curves before and after irradiation is presented here.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
Amitava Roy, Gino Bolla, Daniela Bortoletto, Zheng Li,