| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9845046 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2005 | 6 Pages |
Abstract
Different equivalent circuit diagrams are evaluated for the representation of the CV characteristics, measured with standard equipment, for a typical Si diode after heavy irradiation. A general approach is developed and several minimal models are analysed. A possible mechanism is proposed for the frequency dependence of the depletion voltage extracted from the CV measurements.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
D. Campbell, A. Chilingarov, T. Sloan,