| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9845192 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2005 | 5 Pages |
Abstract
This paper describes a monolithic silicon pixel detector for ionizing radiation manufactured using the Silicon On Insulator (SOI) technology. In this novel device, the sensor is implemented in a high resistive SOI bottom wafer while the associated CMOS read-out circuits are built in a SOI device layer. Preliminary measurements of simple test detectors are presented. They prove that the detector is working properly showing the typical sensitivity of a fully depleted Silicon detector.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
J. Marczewski, M. Caccia, K. Domanski, P. Grabiec, M. Grodner, B. Jaroszewicz, T. Klatka, A. Kociubinski, M. Koziel, W. Kucewicz, K. Kucharski, S. Kuta, H. Niemiec, M. Sapor, M. Szelezniak, D. Tomaszewski,