| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9845194 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2005 | 4 Pages |
Abstract
3D silicon technology is a new way to make silicon detectors using Micro-Electro-Mechanical-Systems (MEMS) processing. In this innovative design the electrodes penetrate through the silicon bulk perpendicular to the surface. Two types of device have been developed-3D and planar 3D. Both use an edge electrode that eliminates the need for guard rings and provides sensitivity to within a few microns of the edge. 3D technology and its advantages are reviewed and examples of the two types of device are shown.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Instrumentation
Authors
C. DaVia, J. Hasi, C. Kenney, A. Kok, S. Parker,