Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9845895 | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 2005 | 5 Pages |
Abstract
Emission, excitation and absorption spectra of HfO2 and ZrO2 thin films grown by atomic layer deposition were investigated in the temperature range of 10-300 K. Time-resolved luminescence spectra were excited with a pulsed ArF laser and tuneable synchrotron radiation in UV-VUV. The strong emission with the peak position at 4.2-4.4 eV and with the decay time in μs range was revealed at 10 K in both materials. The emission was ascribed to the radiative decay of self-trapped excitons (STE). the features observed in the absorption and excitation spectra at 5.8 and 5.4 eV were most probably due to the formation of excitons; While the interband transitions started to dominate at 6.15 and 5.85 ev in HfO2 and ZrO2, respectively.
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Instrumentation
Authors
Marco Kirm, Jaan Aarik, Meelis Jürgens, Ilmo Sildos,