Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9867843 | Physics Letters A | 2005 | 5 Pages |
Abstract
Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150â°C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4Ã10â4Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm2.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
Denghui Xu, Zhenbo Deng, Ying Xu, Jing Xiao, Chunjun Liang, Zhiliang Pei, Chao Sun,