Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9867856 | Physics Letters A | 2005 | 5 Pages |
Abstract
Based on the effective mass approximation, the built-in electric field effect on exciton states confined in wurtzite InGaN/GaN coupled quantum dots (QDs) is investigated by means of a variational approach. We find that the strong built-in electric field in the wurtzite InGaN/GaN coupled QDs gives rise to a marked reduction of the effective band gap of InGaN QDs. The exciton binding energy is reduced monotonically as the barrier thickness between the two coupled wurtzite InGaN QDs is increased.
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Physical Sciences and Engineering
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Physics and Astronomy (General)
Authors
C.X. Xia, S.Y. Wei,