Article ID Journal Published Year Pages File Type
9951526 Applied Surface Science 2019 7 Pages PDF
Abstract
We studied the infrared absorption of a top sulfur hyperdoping layer covering an fs-laser irradiated microstructured Si substrate. To clarify the hyperdoping concentration distributions, and to find out how the top hyperdoping layer affects infrared absorption from 1200 to 2000 nm, a continuous etching treatment was utilized. Then we interpreted the thermal stabilization of both infrared absorption and sulfur hyperdoping concentration. The fundamental cause for infrared-absorption degradation under thermal annealing was explained. Furthermore, we discussed in detail how the interaction between the top hyperdoping layer and surface microstructure contributed to the high infrared absorption by a series of theoretical simulations using a finite-difference time-domain method. A strong localization of an incident electromagnetic wave was observed around the top sulfur hyperdoping layer covering microstructured Si, which played a critical role in improving infrared absorption. The results in this paper are especially beneficial to the subsequent fabrication of photoelectric devices and infrared response improvement.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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