| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9951883 | Fusion Engineering and Design | 2018 | 5 Pages |
Abstract
Deuterium (D) retention behaviors for the 3âkeV Helium (He+) implanted damaged-Tungsten (W) and 10âkeV Carbon (C+) - 3âkeV He+ simultaneous implanted damaged-W were evaluated by thermal desorption spectroscopy (TDS) to understand the synergetic effect of defect formation and C/He existence on D retention behavior for W with various damage level. For the He+ implantation, the retention of D trapped by dislocation loops was controlled by 3âkeV He+ fluence. The D retention in the deeper region was reduced by He+ implantation with higher He+ fluence due to the formation of He bubbles and dense defects at the surface region which would reduce the effective D diffusion coefficient. In addition, in the case of the simultaneous C+ - He+ implantation, the reduction of D retention trapped in the deeper region was also found by the higher C+ - He+ fluence. It can be said that D retention behavior was controlled by the formation of He induced defects and accumulation of He near the surface even if the damages were introduced in the deeper region.
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Authors
Keisuke Azuma, Akihiro Togari, Qilai Zhou, Yuji Hatano, Naoaki Yoshida, Masashi Shimada, Chase N. Taylor, Dean Buchenauer, Robert Kolasinski, Takumi Chikada, Yasuhisa Oya,