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Daneshyari Hardware and Architecture Journas Latest Articles

Hardware and Architecture Research Articles

Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stack
Fulltext Access 4 Pages 2009
Strain sensitivity of gate leakage in strained-SOI nMOSFETs: A benefit for the performance trade-off and a novel way to extract the strain-induced band offset
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Electronic structure of memory traps in silicon nitride
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Interface and border trap relaxation in Si–SiO2 structures with Ge nanocrystals examined by transient capacitance spectroscopy
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Charge retention improvement of charge-trapping type flash device by plasma immersion ion implantation
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Electrical characterization of metal-ferroelectric (Mn-substituted BiFeO3)-insulator (HfO2)-semiconductor capacitors for nonvolatile memory applications
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Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications
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Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells
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Program efficiency and high temperature retention of SiN/high-K based memories
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Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−x)AlxO2 films
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Cycling degradation in TANOS stack
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Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition
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Lanthanum implantation for threshold voltage control in metal/high-k devices
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Atomic-scale theory on current-assisted thermochemical degradation mode and its field acceleration via charge trapping of O vacancy in HfSiO4
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Modeling complexity of a complex gate oxide
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Point defects in Al2O3 and their impact on gate stacks
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A first-principles study of the structural and electronic properties of III–V/thermal oxide interfaces
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Atomic mechanism of flat-band voltage shifts at La2O3, Al2O3 and Nb2O5 capping layers
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Theoretical models for work function control (Invited Paper)
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Stability and Schottky barrier of silicides: First-principles study
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Growth, ambient stability and electrical characterisation of MgO thin films on silicon surfaces
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Net negative charge in low-temperature SiO2 gate dielectric layers
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Experimental evidence of suppression on oxygen vacancy formation in Hf based high-κ gate dielectrics with La incorporation
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Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(1 0 0)
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Characterization of TiOxNy nanoparticles embedded in HfOxNy as charge trapping nodes for nonvolatile memory device applications
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Applications of UV-nanoimprint soft stamps in fabrication of single-frequency diode lasers
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Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks
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Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter
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NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs
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Effects of electromagnetic near-field stress on SiGe HBT’s reliability
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NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer
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Electromagnetic immunity model of an ADC for microcontroller’s reliability improvement
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MEMS reliability: Where are we now?
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Improved etching method for microelectronic devices with supercritical carbon dioxide
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Kinetic Monte Carlo study on boron diffusion posterior to pre-amorphization implant process
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Effect of low-frequency power on etching of SiCOH low-k films in CHF3 13.56 MHz/2 MHz dual-frequency capacitively coupled plasma
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Effect of deposition conditions on charging processes in SiNx: Application to RF-MEMS capacitive switches
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Annealing effect on physical and electrical characteristics of thin HfO2, HfSixOy and HfOyNz films on Si
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Spectroscopic differentiation between O-atom vacancy and divacancy defects, respectively, in TiO2 and HfO2 by X-ray absorption spectroscopy
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Research on the cast molding process for high quality PDMS molds
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Performance improvement of flash memory using AlN as charge-trapping Layer
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UV nanoimprint using flexible polymer template and substrate
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Self-aligned n-channel GaAs metal–oxide–semiconductor field-effect transistors (MOSFETs) using HfO2 and silicon interface passivation layer: Post-metal annealing optimization
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“Smart” TDDB algorithm for investigating degradation in high-κ gate dielectric stacks under constant voltage stress
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Future challenges of flash memory technologies
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Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON
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Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
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First principles study of Nb–W bilayer metal gate electrode
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A nanoanalytical investigation of high-k dielectric gate stacks for GaAs based MOSFET devices
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Impact of temperature on non-equilibrium Fowler-Nordheim EEPROM programming
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Thin silicon oxide films on N-type 4H–SiC prepared by scanning frequency anodization method
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Mechanism of selective Si3N4 etching over SiO2 in hydrogen-containing fluorocarbon plasma
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Controllable fabrication of carbon nanotube-polymer hybrid thin film for strain sensing
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Low temperature sintering properties of Y-doped BaTiO3 ceramics by BaB2O4 sintering aid
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Effects of silver oxalate additions on the physical characteristics of low-temperature-curing MOD silver paste for thick-film applications
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Numerical simulation of spin coated P3HT organic thin film transistors with field dependent mobility and distributed contact resistance
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Imprinted polymer stamps for UV-NIL
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MEMS/microelectronics self-assembly based on analogy of Langmuir–Blodgett approach
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Electrical properties of Pt interconnects for passive crossbar memory arrays
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Sputtered metal lift-off for grating fabrication on InP based optical devices
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Interfacial microstructure and electrical properties of HfAlOx thin films on compressively strained Si83Ge17 grown by RF magnetron sputtering
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Wet releasing and stripping SU-8 structures with a nanoscale sacrificial layer
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The direct nano-patterning of ZnO using nanoimprint lithography with ZnO-sol and thermal annealing
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Environmentally sustainable composite resistors with low temperature coefficient of resistance
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Plastic deformation magnetic assembly of out-of-plane structures using vapour phase hydrofluoric (HF) acid release
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High selectivity (SiN/SiO2) etching using an organic solution containing anhydrous HF
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Enhanced gate induced drain leakage current in HfO2 MOSFETs
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Effect of post annealing on the resistive switching of TiO2 thin film
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Surface acoustic wave characteristics of AlN thin films grown on a polycrystalline 3C-SiC buffer layer
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Replication of high ordered nano-sphere array by nanoimprint lithography
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Efficient organic light-emitting diodes with C60 buffer layer
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The reduction of driving voltage in organic light-emitting devices by inserting step barrier layer
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Study of polarization state of the transmitted light through the cholesteric liquid crystal
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In brief
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Usability evaluation of E-books
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Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator
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Electronic structure of oxygen vacancies in La2O3, Lu2O3 and LaLuO3
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Oxygen vacancy levels and interfaces of Al2O3
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Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone
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Application of non-linear optical second harmonic generation and X-ray absorption and spectroscopies to defect related properties of Hf silicate and Hf Si oxynitride gate dielectrics
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Characterization of interfacial reaction and chemical bonding features of LaOx/HfO2 stack structure formed on thermally-grown SiO2/Si(1 0 0)
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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs
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Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
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Post metallization annealing study in La2O3/Ge MOS structure
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Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning
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Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS
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Improved GeOI substrates for pMOSFET off-state leakage control
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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs
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Product-forms and functional rates
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Band offsets at interfaces of (1 0 0)InxGa1−xAs (0 ⩽ x ⩽ 0.53) with Al2O3 and HfO2
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Challenges of integration of high-κ dielectric with III–V materials (Invited Paper)
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Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper)
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Gate dielectric degradation in CMOS inverters
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Reducing Cu diffusion in SiCOH low-k films by O2 plasma treatment
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Chemical modification of carbon nanotube for improvement of field emission property
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The law of ultrasonic energy conversion in thermosonic flip chip bonding interfaces
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Photo-mask fabrication by low-energy microcolumn lithography
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Formation of Ge nanocrystals in a silicon dioxide layer using pulsed plasma-immersion ion implantation
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Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors
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N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals
Fulltext Access 4 Pages 2009
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