Keywords: Pulsed power; High voltage; Power electronics; Power semiconductor; Discharge; 84.30.Ng; 84.30.Jc; 84.70.+p; 52.80.-s;
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The impact of SFCL and SMES integration on the distance relay
Keywords: 85.25.Am; 84.30.Jc; Superconducting fault current limiter (SFCL); Superconducting magnetic energy storage (SMES); Distance relay; Power system;
Design of practical sliding-mode controllers with constant switching frequency for power converters
Keywords: 84.30.Jc; 02.30.Yy; 07.05.Dz; 07.50.Ek; 47.27.ed; 02.30.Hq; 01.50.MyPower converters; Sliding-mode control; Pulse-width modulation; Nonlinear systems; Discontinuous control
Neon implantation and the radiation enhanced diffusion of platinum for the local lifetime control in high-power silicon diodes
Keywords: 61.80.Jh; 72.20.Jv; 84.30.Jc; 85.30.Kk; 85.40 Ry; Ion beam implantation; Neon; Silicon; Radiation enhanced diffusion; Carrier lifetime; Power devices; Electrical characterization;
LHCb calorimeters high voltage system
Keywords: 07.20.Fw; 85.60.Ha; 84.30.Jc; 84.70.+p; Photomultiplier; High voltage; Calorimeter; Electronics; FPGA;
Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT
Keywords: 85.30.De; 84.30.Jc; 85.30.Pq; 85.30.TvInsulated gate bipolar transistor; Power device; Novel buffer; Better trade-off
A novel high performance insulated gate bipolar transistor
Keywords: 85.30.De; 84.30.Jc; 85.30.Pq; 85.30.TvInsulator gate bipolar transistor; LDE-IGBT; Power device
Novel pulse amplifying circuits based on transmission lines of different characteristic impedance
Keywords: 84.30.Ng; 84.30.Bv; 84.30.Jc; Pulse amplifier; Pulse compressor; Transmission line;
Analysis and characterization of the injection efficiency tuning IGBT
Keywords: 85.30.De; 84.30.Jc; 85.30.Pq; 85.30.TvInsulated gate bipolar transistor; Power device; Novel buffer; Better trade-off; IET-IGBT
Fixed energy voltage compressor: theory, simulation and experiments
Keywords: 84.30.Ng; 84.30.Bv; 84.30.Jc; Voltage compressor; Transmission line; Fast signals;