Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10127494 | Solid-State Electronics | 2018 | 15 Pages |
Abstract
The theoretical and experimental studies on BaSi2/Si heterojunction solar cells have demonstrated the great potential in utilization of BaSi2 material as light absorption layer for developing high efficiency solar cells with low cost. In addition to BaSi2/Si heterojunction solar cells, BaSi2 based Schottky junction solar cells could also be achieved by coupling n-type or p-type BaSi2 with suitable metal electrode. In this work, BaSi2 based Schottky junction solar cells were simulated with the program AMPS (analysis of microelectronic and photonic structures)-1D in order to thoroughly understand the mechanism for further improvement in conversion efficiency. Simulation results demonstrated that a simpler structure of metal/n-BaSi2 Schottky junction solar cell with thickness of 2000â¯nm can reach high conversion efficiency up to 24.12% and 25.28% for NDâ¯=â¯1â¯Ãâ¯1015 cmâ3 and NDâ¯=â¯1â¯Ãâ¯1018 cmâ3 respectively, being comparable to BaSi2/Si heterojunction solar cell. Contact barrier height, illumination condition, as well as defect level of metal/n-BaSi2 Schottky junction solar cell were also identified to significantly influence the device performance.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Lian Chen, Hai Chen, Quanrong Deng, Geming Wang, Shenggao Wang,