Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10401013 | Diamond and Related Materials | 2005 | 5 Pages |
Abstract
Nanocrystalline p-type cubic boron nitride/n-type silicon diodes with three different interfaces were fabricated by plasma chemical vapor deposition and ultrahigh-vacuum bias sputter deposition. When the interface contained a t-BN layer of 25 nm thickness or less, rectification ratios as high as 4Ã104 at room temperature and 10 at 570 K were observed. Even when the interface contained a 1-2-nm-thick insulating layer, diode characteristics were also observed but with a lower rectification ratio of 5Ã102. The carrier conduction at the interface was characterized primarily by thermal excitation, where barrier height altered with bias voltage similar to the case of an ideal n-Si/p-c-BN heterojunction in the temperature range of 300-570 K.
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Electrical and Electronic Engineering
Authors
K. Nose, H.S. Yang, T. Yoshida,