Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10401235 | Diamond and Related Materials | 2005 | 11 Pages |
Abstract
The surface properties, phase composition and microstructure of the diamond films deposited onto alumina were examined by electron energy loss spectroscopy (EELS), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and high-resolution scanning electron microscopy (HR-SEM). The residual stress in the diamond films was evaluated by diamond Raman peak position and compared to a theoretical model with good agreement. Due to the sub-micron grain-size, the intrinsic tensile stress is high enough to partially compensate the thermal compressive stress, especially in diamond films with thickness lower than 1 μm.
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Electrical and Electronic Engineering
Authors
O. Ternyak, R. Akhvlediani, A. Hoffman,