The effect of negative bias pulse on the bonding configurations and properties of DLC films prepared by PBII with acetylene

The effect of negative bias pulse applied to substrate on the bonding configurations and properties of diamond-like carbon (DLC) films prepared by plasma-based ion implantation (PBII) with acetylene were investigated. The research results show that as the plasma density is 109 cm−3 and the negative bias pulses applied to substrate decrease from 50 to 10 kV, the Raman spectra of the carbon films all possess the most dominant characterizations of typical a-C:H [J. Robertson, Mater. Sci. Eng., R 37 (2002) 129-281.], the positions and FWHM for G and D peaks vary no distinguished, but the ratio ID/IG decreases monotonically, as the negative bias pulse decreasing to 5 kV, the Raman spectrum possesses rather strong photoluminescence characterized the polymer-like phase. The variation of Raman spectra for plasma density 108 cm−3 is analogous to that of the plasma density 109 cm−3. The binding energies of XPS C1s peak decrease from the side of diamond peak to the side of graphite peak with the increasing of negative bias pulse from 10 to 50 kV monotonously, the sp3 content in the films increases with the decreasing in the negative bias pulse. With the increasing of negative bias pulse from 0 to 50 kV, the surface electric resistance of the films decreases monotonously, but the surface nanohardness at first increases with the increasing of the negative bias pulse from 0 to 10 kV, then decreases with the increasing of the negative bias pulse from 10 to 50 kV monotonously. These properties of the films are corresponding to the bonding configurations of the films. The reason for the highest sp3 fractions of the a-C:H films formed at higher effective ion energy per C atom in PBII is discussed in this paper.