| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411046 | Sensors and Actuators B: Chemical | 2005 | 5 Pages |
Abstract
In this paper, a new integrated sensing device, that is a crystalline silicon resistor provided with an adsorbing porous silicon layer on its top, is proposed. The sensing mechanism is based on a gas-induced modulation effect of the resistor cross-section due to the adsorbed molecules in the porous film. The sensitivity of the device can be tuned by properly changing the polarization of a gate electrode. The working principle, the fabrication process and the electrical characterization of the device in presence of isopropanol vapors are presented and discussed.
Related Topics
Physical Sciences and Engineering
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Authors
G. Barillaro, A. Diligenti, G. Marola, L.M. Strambini,