Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411127 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
This work presents the results of the effects of mechanical planar biaxial tensile strain applied, post-fabrication, to Si/SiGe HBT BiCMOS technology. Planar biaxial tensile strain was applied to the samples, which included both standard Si CMOS, SiGe HBTs, and an epitaxial-base Si BJT control, for both first and second generation SiGe technologies. Device characterization was performed before and after strain, under identical conditions. At a strain level of 0.123%, increases in the saturated drain current as well as effective mobility are observed for the nFETs. The Si BJT/SiGe HBTs showed a consistent decrease in collector current and hence current gain after strain.
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Engineering
Electrical and Electronic Engineering
Authors
Becca M. Haugerud, Mustayeen B. Nayeem, Ramkumar Krithivasan, Yuan Lu, Chendong Zhu, John D. Cressler, Rona E. Belford, Alvin J. Joseph,