Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10413346 | Solid-State Electronics | 2005 | 6 Pages |
Abstract
Velocity modulation transistors (VMT) are proposed as a way to explode short transit time between two adjacent channels with different transport properties in order to obtain a fast switch. Originally proposed for III-V heterostructures, a Monte Carlo study of silicon-based VMTs is presented in this work showing that surface roughness in double-gate silicon-on-insulator devices can be used as a mobility degradation mechanism to obtain current ratios higher than 30 and therefore feasible devices. Transient simulations have been also carried out obtaining sub-picosecond switch times for 0.1 μm gate length. Switch time limitations are also discussed including both intrinsic and extrinsic factors.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
C. Sampedro, F. Gámiz, A. Godoy, M. Prunnila, J. Ahopelto,