| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10566636 | Organic Electronics | 2013 | 6 Pages |
Abstract
⺠A FRAM memory cell based on 1T1C compatible with flexible electronic applications is demonstrated. ⺠P(VDF-TrFE) is used for the ferroelectric capacitor and CdS is used for TFTs. ⺠The 1T1C memory cell demonstrated achieves a memory window on the bit line of â¼2.3 V.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
D. Mao, I. Mejia, A.L. Salas-Villasenor, M. Singh, H. Stiegler, B.E. Gnade, M.A. Quevedo-Lopez,