Article ID Journal Published Year Pages File Type
10566636 Organic Electronics 2013 6 Pages PDF
Abstract
► A FRAM memory cell based on 1T1C compatible with flexible electronic applications is demonstrated. ► P(VDF-TrFE) is used for the ferroelectric capacitor and CdS is used for TFTs. ► The 1T1C memory cell demonstrated achieves a memory window on the bit line of ∼2.3 V.
Related Topics
Physical Sciences and Engineering Chemistry Chemistry (General)
Authors
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