| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10631122 | Journal of Non-Crystalline Solids | 2012 | 6 Pages |
Abstract
⺠The processes of charge transport in amorphous Si1-xCx:H films have been evaluated. ⺠Annealing at 450 °C improves the rectifying properties. ⺠Annealing at 650  °C leads to hydrogen effusion from the a-Si1-xCx:H film. ⺠An energy band diagram of the a-Si1-xCx:H/p-Si structure is proposed.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Y.V. Gomeniuk, S.O. Gordienko, A.N. Nazarov, A.V. Vasin, A.V. Rusavsky, V.G. Stepanov, V.S. Lysenko, D. Ballutaud, S. Ashok,