| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10631142 | Journal of Non-Crystalline Solids | 2012 | 5 Pages |
Abstract
⺠Doping of NiO films with Sn4+ decreases lattice parameter and controls the structure. ⺠The Sn-doped NiO films are wide-band semiconductors with band gap 3.69-3.76 eV. ⺠The dielectric constant increases with increasing at.% Sn in the sample. ⺠The structural results show the possibility of application of core/shell model. ⺠It is possible to use Sn-doped NiO film as high permittivity optical-sensitive oxide.
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Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
A.A. Dakhel,