Article ID Journal Published Year Pages File Type
10631181 Journal of Non-Crystalline Solids 2012 6 Pages PDF
Abstract
► Thin films of a-Ge:H deposited at high growth rate by rf glow discharge. ► Effect of CH and the hydrogen-bonding configuration on the structural and on the optoelectronic properties. ► When the film thicknesses d increase, the ND and the R decrease gradually. ► The remarkable improvement is attributed to the increase of H incorporated as the strongly Ge-H bonds.
Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
Authors
, , , ,