| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10631341 | Journal of Non-Crystalline Solids | 2005 | 6 Pages |
Abstract
Hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon-oxide alloy films (a-SiOx:H) were investigated by temperature dependence of lateral photovoltage (LPV) measurements. The suboxide sample with [O]Â =Â 27Â at.%, was found to exhibit larger LPV compared to the unalloyed sample. It is difficult to simply correlate LPV measurements to related diffusion length measurements, only. On the other hand, the observed magnitude of LPV in a-Si:H and its decrease with temperature, could be explained based on an internal electric field induced by diffusion electron and hole currents, and multiple trapping of the photocarriers.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
A.O. KodolbaÅ, B. Ãomak, A. BacıogËlu, Ã. Ãktü,