| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10631383 | Journal of Non-Crystalline Solids | 2005 | 7 Pages |
Abstract
Macroscopic and microscopic changes in sputtered GeO2 films induced by band-gap light from an ArF excimer laser have been studied. When irradiated at 1Â atm, the film thickness increases, surface-roughness increases, refractive-index decreases, hygroscopic enhancements, and Ge-O-Ge distance increases. Irradiations in vacuum make these changes smaller or undetectable. These photo-induced changes are discussed from phenomenological and structural viewpoints, and compared with characteristics in GeO2-SiO2 and GeS2 films.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Nobuaki Terakado, Keiji Tanaka,