Article ID Journal Published Year Pages File Type
10631388 Journal of Non-Crystalline Solids 2005 4 Pages PDF
Abstract
We select the boron as a dopant of wide bandgap nanocrystalline silicon-carbide (nc-SiC:H) film in order to achieve a high conductivity. Boron atoms introduced at the growing surface play important roles on the structural, electrical and optical characteristics of this material. It is found that they hinder the nucleation of nanocrystallites by elevating the deposition speed. Therefore, a relevant light doping is essential to improve the electrical conductivity without deteriorating significantly the crystallinity and optical bandgap.
Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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