| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10631388 | Journal of Non-Crystalline Solids | 2005 | 4 Pages |
Abstract
We select the boron as a dopant of wide bandgap nanocrystalline silicon-carbide (nc-SiC:H) film in order to achieve a high conductivity. Boron atoms introduced at the growing surface play important roles on the structural, electrical and optical characteristics of this material. It is found that they hinder the nucleation of nanocrystallites by elevating the deposition speed. Therefore, a relevant light doping is essential to improve the electrical conductivity without deteriorating significantly the crystallinity and optical bandgap.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Seung Yeop Myong, Oleg Shevaleevskiy, Koeng Su Lim, Shinsuke Miyajima, Makoto Konagai,