| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10639900 | Materials Science and Engineering: B | 2013 | 6 Pages |
Abstract
⺠Defect annealing processes were applied to polycrystalline silicon thin films. ⺠Conventional rapid thermal annealing was compared to novel annealing processes using a laser system and a zone-melting recrystallization setup. ⺠The open circuit voltages could be enhanced from below 170 mV up to 482 mV. ⺠Increase in Sun's-VOC values with decrease in FWHM of the TO Raman phonon of crystalline silicon. ⺠Solar cells were fabricated for I-V-measurements: Best solar cell efficiency of 6.7%.
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Authors
S. Steffens, C. Becker, J.-H. Zollondz, A. Chowdhury, A. Slaoui, S. Lindekugel, U. Schubert, R. Evans, B. Rech,