| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10669670 | Thin Solid Films | 2014 | 6 Pages |
Abstract
The distribution of the total transition strength, i.e. the right hand side of the integral form of Thomas-Reiche-Kuhn sum rule, into individual absorption processes is described for crystalline silicon containing interstitial oxygen. Utilization of the sum rule allows the construction of a dispersion model covering all elementary excitations from phonon absorption to core electron excitations. The dependence of transition strength of individual electronic and phonon contributions on temperature and oxygen content is described.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Daniel Franta, David NeÄas, Lenka ZajÃÄková, Ivan OhlÃdal,