Two Gaussian distributions of the barrier height in chemical vapor deposition diamond/silicon junctions over a wide temperature range

Analysis of the current-voltage characteristics of a chemical vapor deposition diamond/n+-Si junction for the temperature range 120-400 K revealed atypical temperature dependence for both the barrier height and the ideality factor and non-linearity in the Richardson plot at low temperatures. These results were interpreted according to model of Chand and Kumar. The junction revealed the existence of two Gaussian distributions of the barrier height, with mean barrier heights of 0.88 and 1.12 eV and standard deviations of 0.098 and 0.132 eV and Richardson constant of 0.5 × 106 and 0.9 × 106 A m−2 K−2 for the temperature intervals 120-200 and 200-400 K, respectively. The polycrystalline diamond matrix is composed of two distinct phases of microcrystals and amorphous carbon and each Gaussian distribution was related to one of these phases.